#include <InducedChargeModel.h>

Inheritance diagram for InducedChargeModel:

Collaboration diagram for InducedChargeModel:

Classes
struct	SCT_InducedChargeModelData

Public Types
enum	EFieldModel { FlatDiodeModel =0, FEMsolutions =1, UniformE =2 }

enum	TransportStep { NTransportSteps =100 }

enum	FEMNums { NRamoPoints =81, NEFieldPoints =17, NDepthPoints =115 }

enum	InducedStrips { StartStrip =-2, EndStrip =+2, Offset =-StartStrip, NStrips =EndStrip+Offset+1 }

Public Member Functions
	InducedChargeModel (size_t maxHash, EFieldModel model=FEMsolutions)

SCT_InducedChargeModelData *	setWaferData (const float vdepl, const float vbias, const InDetDD::SolidStateDetectorElementBase element, const AtlasFieldCacheCondObj fieldCondObj, const ToolHandle< ISiliconConditionsTool > &siConditionsTool, CLHEP::HepRandomEngine *rndmEngine, const EventContext &ctx) const

void	setEField (SCT_InducedChargeModelData &data) const

void	transport (const SCT_InducedChargeModelData &data, const bool isElectron, const double x0, const double y0, double Q_m2, double Q_m1, double Q_00, double Q_p1, double *Q_p2, const IdentifierHash hashId, const ToolHandle< ISiPropertiesTool > &siPropertiesTool, const EventContext &ctx) const

void	holeTransport (const SCT_InducedChargeModelData &data, const double x0, const double y0, double Q_m2, double Q_m1, double Q_00, double Q_p1, double *Q_p2, const IdentifierHash hashId, const ToolHandle< ISiPropertiesTool > &siPropertiesTool, const EventContext &ctx) const

void	electronTransport (const SCT_InducedChargeModelData &data, const double x0, const double y0, double Q_m2, double Q_m1, double Q_00, double Q_p1, double *Q_p2, const IdentifierHash hashId, const ToolHandle< ISiPropertiesTool > &siPropertiesTool, const EventContext &ctx) const

bool	msgLvl (const MSG::Level lvl) const
	Test the output level. More...

MsgStream &	msg () const
	The standard message stream. More...

MsgStream &	msg (const MSG::Level lvl) const
	The standard message stream. More...

void	setLevel (MSG::Level lvl)
	Change the current logging level. More...

Private Member Functions
void	loadICMParameters ()

bool	getVxVyD (const SCT_InducedChargeModelData &data, const bool isElectron, const double x, const double y, double &vx, double &vy, double &D, const IdentifierHash hashId, const ToolHandle< ISiPropertiesTool > &siPropertiesTool, const EventContext &ctx) const

double	induced (const SCT_InducedChargeModelData &data, const int istrip, const double x, const double y) const

void	getEField (const SCT_InducedChargeModelData &data, const double x, const double y, double &Ex, double &Ey) const

void	initMessaging () const
	Initialize our message level and MessageSvc. More...

Static Private Member Functions
static size_t	getFEMIndex (SCT_InducedChargeModelData &data)

Private Attributes
EFieldModel	m_EFieldModel

double	m_transportTimeStep = 0.50

double	m_transportTimeMax = m_transportTimeStep*NTransportSteps

double	m_bulk_depth = 0.0285

double	m_strip_pitch = 0.0080

double	m_y_origin_min = 0.

std::vector< std::array< std::array< double, NDepthPoints >, NRamoPoints > >	m_PotentialValue

std::vector< std::array< std::array< double, NDepthPoints >, NEFieldPoints > >	m_ExValue

std::vector< std::array< std::array< double, NDepthPoints >, NEFieldPoints > >	m_EyValue

std::vector< std::unique_ptr< SCT_InducedChargeModelData > > m_data	ATLAS_THREAD_SAFE

std::mutex	m_mutex

std::string	m_nm
	Message source name. More...

boost::thread_specific_ptr< MsgStream >	m_msg_tls
	MsgStream instance (a std::cout like with print-out levels) More...

std::atomic< IMessageSvc * >	m_imsg { nullptr }
	MessageSvc pointer. More...

std::atomic< MSG::Level >	m_lvl { MSG::NIL }
	Current logging level. More...

Static Private Attributes
static const double	s_kB = Gaudi::Units::k_Boltzmann / Gaudi::Units::joule

static const double	s_e = Gaudi::Units::e_SI

static const std::vector< float >	s_VFD0

static const std::vector< std::string >	s_VFD0str

Detailed Description

Definition at line 43 of file InducedChargeModel.h.

Member Enumeration Documentation

◆ EFieldModel

enum InducedChargeModel::EFieldModel

Enumerator
FlatDiodeModel
FEMsolutions
UniformE

Definition at line 46 of file InducedChargeModel.h.

46 {FlatDiodeModel=0, FEMsolutions=1, UniformE=2};

◆ FEMNums

enum InducedChargeModel::FEMNums

Enumerator
NRamoPoints
NEFieldPoints
NDepthPoints

Definition at line 48 of file InducedChargeModel.h.

48 {NRamoPoints=81, NEFieldPoints=17, NDepthPoints=115};

◆ InducedStrips

enum InducedChargeModel::InducedStrips

Enumerator
StartStrip
EndStrip
Offset
NStrips

Definition at line 49 of file InducedChargeModel.h.

49 {StartStrip=-2, EndStrip=+2, Offset=-StartStrip, NStrips=EndStrip+Offset+1};

◆ TransportStep

enum InducedChargeModel::TransportStep

Enumerator
NTransportSteps

Definition at line 47 of file InducedChargeModel.h.

47 {NTransportSteps=100};

Constructor & Destructor Documentation

◆ InducedChargeModel()

InducedChargeModel::InducedChargeModel	(	size_t	maxHash,
		EFieldModel	model = `FEMsolutions`
	)

Definition at line 31 of file InducedChargeModel.cxx.

                                                                         :
   AthMessaging("InducedChargeModel"),
   m_EFieldModel(model)
 {
   loadICMParameters();
   m_data.resize(maxHash);
 }

Member Function Documentation

◆ electronTransport()

void InducedChargeModel::electronTransport	(	const SCT_InducedChargeModelData &	data,
		const double	x0,
		const double	y0,
		double *	Q_m2,
		double *	Q_m1,
		double *	Q_00,
		double *	Q_p1,
		double *	Q_p2,
		const IdentifierHash	hashId,
		const ToolHandle< ISiPropertiesTool > &	siPropertiesTool,
		const EventContext &	ctx
	)		const

Definition at line 211 of file InducedChargeModel.cxx.

                                                                               {
   // Q_m2[100],Q_m1[100],Q_00[100],Q_p1[100],Q_p2[100] NTransportSteps=100
   const bool isElectron = true;
   transport(data,
             isElectron,
             x0, y0,
             Q_m2, Q_m1, Q_00, Q_p1, Q_p2,
             hashId,
             siPropertiesTool,
             ctx);
 }

◆ getEField()

void InducedChargeModel::getEField	(	const SCT_InducedChargeModelData &	data,
		const double	x,
		const double	y,
		double &	Ex,
		double &	Ey
	)		const

private

Definition at line 308 of file InducedChargeModel.cxx.

                                                                                                      {
   // m_EFieldModel == FlatDiodeModel 0; flat diode model
   // m_EFieldModel == FEMsolutions 1; FEM solusions
   // m_EFieldModel == UniformE 2; uniform E-field model
   // x == 0.0040 [cm] : at the center of strip
   // x must be within 0 and 0.008 [cm]
  
   // Electric field : 16 divisions (17 points) with 2.5 um intervals from 0-40 um.
   // In sensor depth directions 114 divisions (115 points) with 2.5 nm intervals for 285 um.
   const double deltay=0.00025, deltax=0.00025; // [cm]
  
   Ex = 0.;
   Ey = 0.;
   if (y < 0. || y > m_bulk_depth) return;
   //---------- case for FEM analysis solution  -------------------------
   if (data.m_EFieldModel==FEMsolutions) {
     int iy = static_cast<int>(y/deltay);
     double fy = (y-iy*deltay) / deltay;
     double xhalfpitch = m_strip_pitch/2.;
     double x999 = 999.*m_strip_pitch;
     double xx = fmod(x+x999, m_strip_pitch);
     double xxx = xx;
     if (xx > xhalfpitch) xxx = m_strip_pitch - xx;
     int ix = static_cast<int>(xxx/deltax);
     double fx = (xxx - ix*deltax) / deltax;
  
     int ix1 = ix+1;
     int iy1 = iy+1;
     double Ex00 = 0., Ex10 = 0., Ex01 = 0., Ex11 = 0.;
     double Ey00 = 0., Ey10 = 0., Ey01 = 0., Ey11 = 0.;
     //-------- pick up appropriate data file for m_VD-----------------------
  
     Ex00 = data.m_ExValue[ix][iy];  Ex10 = data.m_ExValue[ix1][iy];
     Ex01 = data.m_ExValue[ix][iy1]; Ex11 = data.m_ExValue[ix1][iy1];
     Ey00 = data.m_EyValue[ix][iy];  Ey10 = data.m_EyValue[ix1][iy];
     Ey01 = data.m_EyValue[ix][iy1]; Ey11 = data.m_EyValue[ix1][iy1];
  
     //---------------- end of data bank search---
     Ex = Ex00*(1.-fx)*(1.-fy) + Ex10*fx*(1.-fy)
        + Ex01*(1.-fx)*    fy  + Ex11*fx*    fy;
     if (xx > xhalfpitch) Ex = -Ex;
     Ey = Ey00*(1.-fx)*(1.-fy) + Ey10*fx*(1.-fy)
        + Ey01*(1.-fx)*    fy  + Ey11*fx*    fy;
   }
   //---------- case for uniform electric field ------------------------
   else if (data.m_EFieldModel==UniformE) {
     if (m_bulk_depth - y < data.m_depletion_depth && data.m_depletion_depth >0.) {
       Ey = data.m_VB / data.m_depletion_depth;
     } else { 
       Ey = 0.;
     }
   }
   //---------- case for flat diode model ------------------------------
   else if (data.m_EFieldModel==FlatDiodeModel) {
     if (data.m_VB > std::abs(data.m_VD)) { 
       Ey = (data.m_VB+data.m_VD)/m_bulk_depth - 2.*data.m_VD*(m_bulk_depth-y)/(m_bulk_depth*m_bulk_depth);
     } else {
       if (m_bulk_depth - y < data.m_depletion_depth && data.m_depletion_depth >0.) {
         double Emax = 2.* data.m_depletion_depth * std::abs(data.m_VD) / (m_bulk_depth*m_bulk_depth);
         Ey = Emax*(1.-(m_bulk_depth-y)/data.m_depletion_depth);
       } else { 
         Ey = 0.;
       }
     }
   }
 }

◆ getFEMIndex()

size_t InducedChargeModel::getFEMIndex ( SCT_InducedChargeModelData & data )

staticprivate

Definition at line 377 of file InducedChargeModel.cxx.

                                                                        {
   // Return index for s_VFD0 and EFieldModel.
   // If vdepl is out of range of s_VFD0, EFieldModel of FlatDiodeModel is returned.
   size_t iVFD = 0;
   if (data.m_VD<s_VFD0[0] || data.m_VD>s_VFD0[s_VFD0.size()-1]) { // Out of range
     data.m_EFieldModel = FlatDiodeModel;
   } else {
     float dVFD2 = 0.;
     for (iVFD=0; iVFD<s_VFD0.size()-1; iVFD++) {
       dVFD2 = s_VFD0[iVFD+1] - data.m_VD;
       if (dVFD2 >= 0.) break;
     }
   }
   return iVFD;
 }

◆ getVxVyD()

bool InducedChargeModel::getVxVyD	(	const SCT_InducedChargeModelData &	data,
		const bool	isElectron,
		const double	x,
		const double	y,
		double &	vx,
		double &	vy,
		double &	D,
		const IdentifierHash	hashId,
		const ToolHandle< ISiPropertiesTool > &	siPropertiesTool,
		const EventContext &	ctx
	)		const

private

Definition at line 231 of file InducedChargeModel.cxx.

                                                                      {
   double Ex, Ey;
   getEField(data, x, y, Ex, Ey); // [V/cm]
   if (Ey > 0.) {
     if (isElectron) {
       // because electron has negative charge
       Ex *= -1.;
       Ey *= -1.;
     }
     const double E = std::sqrt(Ex*Ex+Ey*Ey);
     const double mu = (isElectron ?
                        siPropertiesTool->getSiProperties(hashId, ctx).calcElectronDriftMobility(data.m_T, E*CLHEP::volt/CLHEP::cm) :
                        siPropertiesTool->getSiProperties(hashId, ctx).calcHoleDriftMobility    (data.m_T, E*CLHEP::volt/CLHEP::cm))
       * (CLHEP::volt/CLHEP::cm)/(CLHEP::cm/CLHEP::s);
     const double v = mu * E;
     const double r = (isElectron ?
                       siPropertiesTool->getSiProperties(hashId, ctx).calcElectronHallFactor(data.m_T) :
                       siPropertiesTool->getSiProperties(hashId, ctx).calcHoleHallFactor(data.m_T));
  
     const double tanLA = data.m_element->design().readoutSide()
       * r * mu * (isElectron ? -1. : +1.) // because e has negative charge.
       * data.m_element->hitDepthDirection()
       * data.m_element->hitPhiDirection()
       * (data.m_element->normal().cross(data.m_magneticField)).dot(data.m_element->phiAxis())
       / Gaudi::Units::tesla * Gaudi::Units::gauss * 1000.; // 1000. is to convert kTesla to Tesla.
  
     const double secLA = std::sqrt(1.+tanLA*tanLA);
     const double cosLA = 1./secLA;
     const double sinLA = tanLA/secLA;
     vy = v * (Ey*cosLA - Ex*sinLA)/E;
     vx = v * (Ex*cosLA + Ey*sinLA)/E;
     D = s_kB * data.m_T * mu/ s_e;
     return true;
   }
   return false;
 }

◆ holeTransport()

void InducedChargeModel::holeTransport	(	const SCT_InducedChargeModelData &	data,
		const double	x0,
		const double	y0,
		double *	Q_m2,
		double *	Q_m1,
		double *	Q_00,
		double *	Q_p1,
		double *	Q_p2,
		const IdentifierHash	hashId,
		const ToolHandle< ISiPropertiesTool > &	siPropertiesTool,
		const EventContext &	ctx
	)		const

Definition at line 191 of file InducedChargeModel.cxx.

                                                                           {
   // Q_m2[100],Q_m1[100],Q_00[100],Q_p1[100],Q_p2[100] NTransportSteps=100
   const bool isElectron = false;
   transport(data,
             isElectron,
             x0, y0,
             Q_m2, Q_m1, Q_00, Q_p1, Q_p2,
             hashId,
             siPropertiesTool,
             ctx);
 }

◆ induced()

double InducedChargeModel::induced	(	const SCT_InducedChargeModelData &	data,
		const int	istrip,
		const double	x,
		const double	y
	)		const

private

Definition at line 276 of file InducedChargeModel.cxx.

 {
   // x and y are the location of charge (e or hole)
   // induced charge on the strip "istrip" situated at the height y = d
   // the center of the strip (istrip=0) is x = 0.004 [cm]
  
   // Ramo potential : 80 divisions (81 points) with 5 um intervals from 40-440 um.
   // In sensor depth directions 114 divisions (115 points) with 2.5 nm intervals for 285 um.
   const double deltax = 0.0005, deltay = 0.00025;
    
   if (y < 0. || y > m_bulk_depth) return 0.;
   double xc = m_strip_pitch * (istrip + 0.5);
   double dx = std::abs(x-xc);
   int ix = static_cast<int>(dx / deltax);
   if (ix >= NRamoPoints) return 0.;
   int iy = static_cast<int>(y  / deltay);
   double fx = (dx - ix*deltax) / deltax;
   double fy = ( y - iy*deltay) / deltay;
   int ix1 = ix + 1;
   int iy1 = iy + 1;
   double P = m_PotentialValue[data.m_EFieldModel][ix ][iy ] *(1.-fx)*(1.-fy)
            + m_PotentialValue[data.m_EFieldModel][ix1][iy ] *    fx *(1.-fy)
            + m_PotentialValue[data.m_EFieldModel][ix ][iy1] *(1.-fx)*    fy
            + m_PotentialValue[data.m_EFieldModel][ix1][iy1] *     fx*    fy;
  
   return P;
 }

◆ initMessaging()

void AthMessaging::initMessaging ( ) const

privateinherited

Initialize our message level and MessageSvc.

This method should only be called once.

Definition at line 39 of file AthMessaging.cxx.

 {
   m_imsg = Athena::getMessageSvc();
   m_lvl = m_imsg ?
     static_cast<MSG::Level>( m_imsg.load()->outputLevel(m_nm) ) :
     MSG::INFO;
 }

◆ loadICMParameters()

void InducedChargeModel::loadICMParameters ( )

private

Definition at line 395 of file InducedChargeModel.cxx.

                                            {
   // Loading Ramo potential and Electric field.
   // In strip pitch directions :
   //  Ramo potential : 80 divisions (81 points) with 5 um intervals from 40-440 um.
   //  Electric field : 16 divisions (17 points) with 2.5 um intervals from 0-40 um.
   // In sensor depth directions (for both potential and Electric field):
   //  114 divisions (115 points) with 2.5 nm intervals for 285 um.
  
   TFile *hfile = new TFile(PathResolverFindCalibFile("SCT_Digitization/SCT_InducedChargedModel.root").c_str());
  
   // For Ramo Potential 
   TH2F* h_Potential_FDM = static_cast<TH2F*>(hfile->Get("Potential_FDM"));
   TH2F* h_Potential_FEM = static_cast<TH2F*>(hfile->Get("Potential_FEM"));
   // FDM case keeps only FDM potential.
   // FEM case keeps both FDM and FEM potentials.
   if (m_EFieldModel==FlatDiodeModel || m_EFieldModel==FEMsolutions) {
     if (m_EFieldModel==FlatDiodeModel) m_PotentialValue.resize(FlatDiodeModel+1);
     else m_PotentialValue.resize(FEMsolutions+1);
     for (int ix=0; ix<NRamoPoints; ix++) {
       for (int iy=0; iy<NDepthPoints; iy++) {
         m_PotentialValue[FlatDiodeModel][ix][iy] = h_Potential_FDM->GetBinContent(ix+1, iy+1);
         if (m_EFieldModel==FEMsolutions) {
           m_PotentialValue[FEMsolutions][ix][iy] = h_Potential_FEM->GetBinContent(ix+1, iy+1);
         }
       }
     }
   }
   h_Potential_FDM->Delete();
   h_Potential_FEM->Delete();
  
   if (m_EFieldModel==FEMsolutions) {
     size_t i=0;
     m_ExValue.resize(s_VFD0str.size()+1);
     m_EyValue.resize(s_VFD0str.size()+1);
     for (const std::string& str : s_VFD0str) {
       TH2F* h_Ex = static_cast<TH2F*>(hfile->Get(("Ex_FEM_"+str+"_0").c_str()));
       TH2F* h_Ey = static_cast<TH2F*>(hfile->Get(("Ey_FEM_"+str+"_0").c_str()));
       for (int ix=0; ix <NEFieldPoints; ix++){
         for (int iy=0; iy<NDepthPoints; iy++) {
           m_ExValue[i][ix][iy] = h_Ex->GetBinContent(ix+1, iy+1);
           m_EyValue[i][ix][iy] = h_Ey->GetBinContent(ix+1, iy+1);
         }
       }
       h_Ex->Delete();
       h_Ey->Delete();
       i++;
     }
  
     TH2F* h_ExHV = static_cast<TH2F*>(hfile->Get("Ex_FEM_0_100"));
     TH2F* h_EyHV = static_cast<TH2F*>(hfile->Get("Ey_FEM_0_100"));
     for (int ix=0; ix <NEFieldPoints; ix++){
       for (int iy=0; iy<NDepthPoints; iy++) {
         m_ExValue[i][ix][iy] = h_ExHV->GetBinContent(ix+1, iy+1);
         m_EyValue[i][ix][iy] = h_EyHV->GetBinContent(ix+1, iy+1);
       }
     }
     h_ExHV->Delete();
     h_EyHV->Delete();
   }
  
   hfile->Close();
 }

◆ msg() [1/2]

MsgStream & AthMessaging::msg ( ) const

inlineinherited

The standard message stream.

Returns a reference to the default message stream May not be invoked before sysInitialize() has been invoked.

Definition at line 164 of file AthMessaging.h.

 {
   MsgStream* ms = m_msg_tls.get();
   if (!ms) {
     if (!m_initialized.test_and_set()) initMessaging();
     ms = new MsgStream(m_imsg,m_nm);
     m_msg_tls.reset( ms );
   }
  
   ms->setLevel (m_lvl);
   return *ms;
 }

◆ msg() [2/2]

MsgStream & AthMessaging::msg ( const MSG::Level lvl ) const

inlineinherited

The standard message stream.

Returns a reference to the default message stream May not be invoked before sysInitialize() has been invoked.

Definition at line 179 of file AthMessaging.h.

180 { return msg() << lvl; }

◆ msgLvl()

bool AthMessaging::msgLvl ( const MSG::Level lvl ) const

inlineinherited

Test the output level.

Parameters

lvl	The message level to test against

Returns: boolean Indicating if messages at given level will be printed

Return values

true	Messages at level "lvl" will be printed

Definition at line 151 of file AthMessaging.h.

 {
   if (!m_initialized.test_and_set()) initMessaging();
   if (m_lvl <= lvl) {
     msg() << lvl;
     return true;
   } else {
     return false;
   }
 }

◆ setEField()

void InducedChargeModel::setEField ( SCT_InducedChargeModelData & data ) const

Definition at line 458 of file InducedChargeModel.cxx.

                                                                          {
   if (data.m_EFieldModel!=FEMsolutions) return;
  
   size_t iVFD = getFEMIndex(data);
   if (data.m_EFieldModel==FlatDiodeModel) {
     ATH_MSG_INFO("Changed to Flat Diode Model since deplettion volage is out of range. ("
                  << s_VFD0[0] << " < m_VD < " << s_VFD0[s_VFD0.size()-1] << " is allowed.)");
     return;
   }
  
   const float dVFD1 = data.m_VD - s_VFD0[iVFD];
   const float dVFD2 = s_VFD0[iVFD+1] - data.m_VD;
  
   const float scalingFactor = data.m_VB / 100.; // Reference voltage is 100 V
  
   const size_t iHV = s_VFD0.size();
  
   // For Electric field
   for (int ix=0; ix <NEFieldPoints; ix++){
     for (int iy=0; iy<NDepthPoints; iy++) {
       float Ex1  = m_ExValue[iVFD  ][ix][iy];
       float Ex2  = m_ExValue[iVFD+1][ix][iy];
       float ExHV = m_ExValue[iHV   ][ix][iy];
       data.m_ExValue[ix][iy] = (Ex1*dVFD2+Ex2*dVFD1)/(dVFD1+dVFD2);
       data.m_ExValue[ix][iy] += ExHV*scalingFactor;
  
       float Ey1  = m_EyValue[iVFD  ][ix][iy];
       float Ey2  = m_EyValue[iVFD+1][ix][iy];
       float EyHV = m_EyValue[iHV   ][ix][iy];
       data.m_EyValue[ix][iy] = (Ey1*dVFD2+Ey2*dVFD1)/(dVFD1+dVFD2);
       data.m_EyValue[ix][iy] += EyHV*scalingFactor;
     }
   }
 }

◆ setLevel()

void AthMessaging::setLevel ( MSG::Level lvl )

inherited

Change the current logging level.

Use this rather than msg().setLevel() for proper operation with MT.

Definition at line 28 of file AthMessaging.cxx.

 {
   m_lvl = lvl;
 }

◆ setWaferData()

InducedChargeModel::SCT_InducedChargeModelData * InducedChargeModel::setWaferData	(	const float	vdepl,
		const float	vbias,
		const InDetDD::SolidStateDetectorElementBase *	element,
		const AtlasFieldCacheCondObj *	fieldCondObj,
		const ToolHandle< ISiliconConditionsTool > &	siConditionsTool,
		CLHEP::HepRandomEngine *	rndmEngine,
		const EventContext &	ctx
	)		const

Definition at line 40 of file InducedChargeModel.cxx.

                                                                     {
   std::lock_guard<std::mutex> lock(m_mutex);
  
   // If cache exists, cache is used.
   SCT_InducedChargeModelData* p_data = m_data[element->identifyHash()].get();
   if (p_data) return p_data;
  
   ATH_MSG_DEBUG("--- Induced Charged Model Paramter (Begin) --------");
  
   HepGeom::Point3D<double> localpos(0., 0., 0.); // The center of wafer
   HepGeom::Point3D<double> globalpos = element->globalPositionHit(localpos);
   double point[3] = {globalpos.x(), globalpos.y(), globalpos.z()};
   double field[3] = {0., 0., 0.};
   MagField::AtlasFieldCache fieldCache;
   fieldCondObj->getInitializedCache(fieldCache);
   fieldCache.getField(point, field);
   const Amg::Vector3D magneticField(field[0], field[1], field[2]); // in kTesla
  
   //---------------setting basic parameters---------------------------
   std::unique_ptr<SCT_InducedChargeModelData> data =
     std::make_unique<SCT_InducedChargeModelData>(vdepl,
                                                  vbias,
                                                  element,
                                                  magneticField,
                                                  m_bulk_depth,
                                                  m_EFieldModel,
                                                  siConditionsTool,
                                                  rndmEngine,
                                                  ctx);
  
   //--- set electric fields ---
   setEField(*data);
  
   //--------------------------------------------------------
  
   ATH_MSG_DEBUG(" EFieldModel  0 (Flat Diode Model), 1 (FEM solusions) 2 (uniform E)\t"<< data->m_EFieldModel);
   ATH_MSG_DEBUG(" DepletionVoltage_VD\t"<< data->m_VD <<" V");
   ATH_MSG_DEBUG(" BiasVoltage_VB     \t"<< data->m_VB  <<" V");
   ATH_MSG_DEBUG(" MagneticField_B    \t"
                 << data->m_magneticField[Amg::x] << " "
                 << data->m_magneticField[Amg::y] << " "
                 << data->m_magneticField[Amg::z] <<" kTesla");
   ATH_MSG_DEBUG(" Temperature_T      \t"<< data->m_T  <<" K");
   ATH_MSG_DEBUG(" TransportTimeStep  \t"<< m_transportTimeStep <<" ns");
   ATH_MSG_DEBUG(" TransportTimeMax\t"<< m_transportTimeMax <<" ns");
   ATH_MSG_DEBUG(" BulkDepth\t\t"<< m_bulk_depth << " cm");
   ATH_MSG_DEBUG(" DepletionDepth\t\t"<< data->m_depletion_depth << " cm");
   ATH_MSG_DEBUG(" StripPitch\t\t"<< m_strip_pitch << " cm");
   ATH_MSG_DEBUG("--- Induced Charged Model Paramter (End) ---------");
  
   m_data[element->identifyHash()] = std::move(data);
  
   return m_data[element->identifyHash()].get();
 }

◆ transport()

void InducedChargeModel::transport	(	const SCT_InducedChargeModelData &	data,
		const bool	isElectron,
		const double	x0,
		const double	y0,
		double *	Q_m2,
		double *	Q_m1,
		double *	Q_00,
		double *	Q_p1,
		double *	Q_p2,
		const IdentifierHash	hashId,
		const ToolHandle< ISiPropertiesTool > &	siPropertiesTool,
		const EventContext &	ctx
	)		const

Definition at line 104 of file InducedChargeModel.cxx.

                                                                       {
   // transport electrons and holes in the bulk
   // T. Kondo, 2010.9.9, 2017.7.20
   // External parameters to be specified
   //   m_transportTimeMax  [nsec]
   //   m_transportTimeStep [nsec]
   //   m_bulk_depth        [cm]
   // Induced currents are added to every m_transportTimeStep (defailt is 0.5 ns):
   // Q_m2[100],Q_m1[100],Q_00[100],Q_p1[100],Q_p2[100] NTransportSteps=100
   // means 50 ns storages of charges in each strips. 
  
   double x = x0; // original electron/hole position [cm]
   double y = y0; // original electron/hole position [cm]
   bool   isInBulk = true;
   double t_current = 0.;
   double qstrip[NStrips]; // induced charges on strips due to an electron or a hole
   double vx, vy, D;
   for (int istrip=StartStrip; istrip<=EndStrip; istrip++) {
     qstrip[istrip+Offset] = (isElectron ? -1. : +1.) * induced(data, istrip, x, y); // original induced charge by electron or hole
   }
   while (t_current < m_transportTimeMax) {
     if (!isInBulk) break;
     if (!getVxVyD(data, isElectron, x, y, vx, vy, D, hashId, siPropertiesTool, ctx)) break;
     double delta_y = vy * m_transportTimeStep / Gaudi::Units::second; // ns -> s
     y += delta_y;
     double dt = m_transportTimeStep; // [nsec]
     if (isElectron) {
       if (y < m_y_origin_min) {
         isInBulk = false;
         dt = (m_y_origin_min - (y-delta_y))/delta_y * m_transportTimeStep;
         y = m_y_origin_min;
       }
     } else {
       if (y > m_bulk_depth) {
         isInBulk = false; // outside bulk region
         dt = (m_bulk_depth - (y-delta_y))/delta_y * m_transportTimeStep;
         y = m_bulk_depth;
       }
     }
     t_current += dt;
     x += vx * dt / Gaudi::Units::second; // ns -> s
     double diffusion = std::sqrt(2.* D * dt / Gaudi::Units::second); // ns -> s
     y += diffusion * CLHEP::RandGaussZiggurat::shoot(data.m_rndmEngine, 0.0, 1.0);
     x += diffusion * CLHEP::RandGaussZiggurat::shoot(data.m_rndmEngine, 0.0, 1.0);
     if (isElectron) {
       if (y < m_y_origin_min) {
         y = m_y_origin_min;
         isInBulk = false;
       }
     } else {
       if (y > m_bulk_depth) {
         y = m_bulk_depth;
         isInBulk = false; // outside bulk region
       }
     }
  
     // get induced current by subtracting induced charges
     for (int istrip=StartStrip; istrip<=EndStrip; istrip++) {
       double qnew = (isElectron ? -1. : +1.) * induced(data, istrip, x, y);
       int jj = istrip + Offset;
       double dq = qnew - qstrip[jj];
       qstrip[jj] = qnew;
  
       int jt = static_cast<int>((t_current+0.001) / m_transportTimeStep);
       if (jt < NTransportSteps) {
         switch (istrip) {
         case -2: Q_m2[jt] += dq; break;
         case -1: Q_m1[jt] += dq; break;
         case  0: Q_00[jt] += dq; break;
         case +1: Q_p1[jt] += dq; break;
         case +2: Q_p2[jt] += dq; break;
         } 
       }
  
     }
   } // end of electron or hole tracing
 }

Member Data Documentation

◆ ATLAS_THREAD_SAFE

std::vector<std::unique_ptr<SCT_InducedChargeModelData> > m_data InducedChargeModel::ATLAS_THREAD_SAFE

mutableprivate

Definition at line 172 of file InducedChargeModel.h.

◆ m_bulk_depth

double InducedChargeModel::m_bulk_depth = 0.0285

private

Definition at line 153 of file InducedChargeModel.h.

◆ m_EFieldModel

EFieldModel InducedChargeModel::m_EFieldModel

private

Definition at line 148 of file InducedChargeModel.h.

◆ m_ExValue

std::vector<std::array<std::array<double, NDepthPoints>, NEFieldPoints> > InducedChargeModel::m_ExValue

private

Definition at line 166 of file InducedChargeModel.h.

◆ m_EyValue

std::vector<std::array<std::array<double, NDepthPoints>, NEFieldPoints> > InducedChargeModel::m_EyValue

private

Definition at line 167 of file InducedChargeModel.h.

◆ m_imsg

std::atomic<IMessageSvc*> AthMessaging::m_imsg { nullptr }

mutableprivateinherited

MessageSvc pointer.

Definition at line 135 of file AthMessaging.h.

◆ m_lvl

std::atomic<MSG::Level> AthMessaging::m_lvl { MSG::NIL }

mutableprivateinherited

Current logging level.

Definition at line 138 of file AthMessaging.h.

◆ m_msg_tls

boost::thread_specific_ptr<MsgStream> AthMessaging::m_msg_tls

mutableprivateinherited

MsgStream instance (a std::cout like with print-out levels)

Definition at line 132 of file AthMessaging.h.

◆ m_mutex

std::mutex InducedChargeModel::m_mutex

mutableprivate

Definition at line 174 of file InducedChargeModel.h.

◆ m_nm

std::string AthMessaging::m_nm

privateinherited

Message source name.

Definition at line 129 of file AthMessaging.h.

◆ m_PotentialValue

std::vector<std::array<std::array<double, NDepthPoints>, NRamoPoints> > InducedChargeModel::m_PotentialValue

private

Definition at line 165 of file InducedChargeModel.h.

◆ m_strip_pitch

double InducedChargeModel::m_strip_pitch = 0.0080

private

Definition at line 154 of file InducedChargeModel.h.

◆ m_transportTimeMax

double InducedChargeModel::m_transportTimeMax = m_transportTimeStep*NTransportSteps

private

Definition at line 150 of file InducedChargeModel.h.

◆ m_transportTimeStep

double InducedChargeModel::m_transportTimeStep = 0.50

private

Definition at line 149 of file InducedChargeModel.h.

◆ m_y_origin_min

double InducedChargeModel::m_y_origin_min = 0.

private

Definition at line 155 of file InducedChargeModel.h.

◆ s_e

const double InducedChargeModel::s_e = Gaudi::Units::e_SI

staticprivate

Definition at line 145 of file InducedChargeModel.h.

◆ s_kB

const double InducedChargeModel::s_kB = Gaudi::Units::k_Boltzmann / Gaudi::Units::joule

staticprivate

Definition at line 144 of file InducedChargeModel.h.

◆ s_VFD0

const std::vector< float > InducedChargeModel::s_VFD0

staticprivate

Initial value:

=

{ -180., -150., -120., -90., -60., -30., 0., 30., 70.}

Definition at line 176 of file InducedChargeModel.h.

◆ s_VFD0str

const std::vector< std::string > InducedChargeModel::s_VFD0str

staticprivate

Initial value:

=

{"M180", "M150", "M120", "M90", "M60", "M30", "0", "30", "70"}

Definition at line 177 of file InducedChargeModel.h.

The documentation for this class was generated from the following files:

Classes

Public Types

Public Member Functions

Private Member Functions

Static Private Member Functions

Private Attributes

Static Private Attributes

Detailed Description

Member Enumeration Documentation

◆ EFieldModel

◆ FEMNums

◆ InducedStrips

◆ TransportStep

Constructor & Destructor Documentation

◆ InducedChargeModel()

Member Function Documentation

◆ electronTransport()

◆ getEField()

◆ getFEMIndex()

◆ getVxVyD()

◆ holeTransport()

◆ induced()

◆ initMessaging()

◆ loadICMParameters()

◆ msg() [1/2]

◆ msg() [2/2]

◆ msgLvl()

◆ setEField()

◆ setLevel()

◆ setWaferData()

◆ transport()

Member Data Documentation

◆ ATLAS_THREAD_SAFE

◆ m_bulk_depth

◆ m_EFieldModel

◆ m_ExValue

◆ m_EyValue

◆ m_imsg

◆ m_lvl

◆ m_msg_tls

◆ m_mutex

◆ m_nm

◆ m_PotentialValue

◆ m_strip_pitch

◆ m_transportTimeMax

◆ m_transportTimeStep

◆ m_y_origin_min

◆ s_e

◆ s_kB

◆ s_VFD0

◆ s_VFD0str