PixelGeoDC2::GeoPixelSiCrystal Class Reference

#include <PixelDetectorDC1DC2.h>

Inheritance diagram for PixelGeoDC2::GeoPixelSiCrystal:

Collaboration diagram for PixelGeoDC2::GeoPixelSiCrystal:

Public Member Functions
	GeoPixelSiCrystal (InDetDD::PixelDetectorManager *ddmgr, PixelGeometryManager *mgr, bool isBLayer)
virtual GeoVPhysVol *	Build () override
Identifier	getID ()

Protected Attributes
PixelGeometryManager *	m_gmt_mgr {}
StoredMaterialManager *	m_mat_mgr {}
InDetDD::PixelDetectorManager *	m_DDmgr {}
const double	m_epsilon {}

Private Attributes
Identifier	m_id
const InDetDD::SiDetectorDesign *	m_design {}
bool	m_isBLayer {}

Detailed Description

Definition at line 310 of file PixelDetectorDC1DC2.h.

Constructor & Destructor Documentation

GeoPixelSiCrystal()

GeoPixelSiCrystal::GeoPixelSiCrystal	(	InDetDD::PixelDetectorManager *	ddmgr,
		PixelGeometryManager *	mgr,
		bool	isBLayer
	)

local-x/phi/row ^ big (1) .... normal pitch (columnsPerCircuit-2) ... big

Definition at line 1171 of file PixelDetectorDC1DC2.cxx.

  : GeoVPixelFactory (ddmgr, mgr)
{
  // 
  //Builds the design for this crystal
  m_isBLayer = isBLayer;
  //SiDetectorDesign::Axis etaAxis   = SiDetectorDesign::zAxis;
  //SiDetectorDesign::Axis phiAxis   = SiDetectorDesign::yAxis;
  //SiDetectorDesign::Axis depthAxis = SiDetectorDesign::xAxis;
  double thickness = m_gmt_mgr->PixelBoardThickness();
  int circuitsPerEta = m_gmt_mgr->DesignCircuitsPerColumn();
  int circuitsPerPhi = m_gmt_mgr->DesignCircuitsPerRow();
  int CellRowPerCirc = m_gmt_mgr->DesignCellRowsPerCircuit(isBLayer);
  int CellColPerCirc = m_gmt_mgr->DesignCellColumnsPerCircuit(isBLayer);
  int rowsPerCircuit = m_gmt_mgr->DesignDiodeRowsPerCircuit(isBLayer);
  int columnsPerCircuit = m_gmt_mgr->DesignDiodeColumnsPerCircuit(isBLayer);
 
  // Add the matrix in the same way as from AGDD... 
  //
  //double startRP = -m_gmt_mgr->DesignRPActiveArea()/2.;
  //double startZ =  -m_gmt_mgr->DesignZActiveArea()/2.;
  //double ColSize = m_gmt_mgr->DesignZActiveArea()/m_gmt_mgr->DesignCircuitsPerRow();
  double pitchEtaBig =  m_gmt_mgr->DesignPitchZ(isBLayer) + m_gmt_mgr->DesignGapZ()/2;
  double pitchPhi = m_gmt_mgr->DesignPitchRP(isBLayer);
  double pitchEta = m_gmt_mgr->DesignPitchZ(isBLayer);
 
  // assumed layout
  // circuit :
  //                  |   .
  //                  |   .
  //                  |   .
  //                  +---> local-y / eta/ column
  //
  //  full matrix : matrix of n-circuits    n | ...  | N/2
  //                with 2 rows             ----------------
  //                                        0 | ...  | N/2-1  
 
  constexpr auto readoutTechnology = InDetDD::PixelReadoutTechnology::FEI3;
  constexpr auto kNDirections = InDetDD::detail::kNDirections;
  constexpr auto kNPixelLocations = InDetDD::detail::kNPixelLocations;
  PixelDiodeTree diode_tree = InDetDD::detail::makePixelDiodeTree(m_gmt_mgr,
                                                    readoutTechnology,
                                                    std::array<int,kNDirections>{circuitsPerPhi,circuitsPerEta},    // [0]=phi/row, [1]=eta/column
                                                    std::array<int,kNDirections>{rowsPerCircuit,columnsPerCircuit}, // [0]=phi/row, [1]=eta/column
                                                    std::array<std::array<double,kNDirections>,kNPixelLocations>{   // regular/central,longEnd/outer,long/inner
                                                       std::array<double,kNDirections>{pitchPhi,pitchEta},
                                                       std::array<double,kNDirections>{0.,pitchEtaBig},
                                                       std::array<double,kNDirections>{0.,pitchEtaBig}});
 
  std::unique_ptr<PixelModuleDesign> p_barrelDesign2 = std::make_unique<PixelModuleDesign>(thickness,
                                 circuitsPerEta,
                                 circuitsPerPhi,
                                 CellColPerCirc,
                                 CellRowPerCirc,
                                 columnsPerCircuit,
                                 rowsPerCircuit,
                                 std::move(diode_tree),
                                 InDetDD::electrons,
                                 -1,                 /* readout side */
                                 false,              /* 3D */
                                 InDetDD::Undefined, /* detector type */
                                 readoutTechnology);
 
  // Multiple connections (ganged pixels)
  if (m_gmt_mgr->NumberOfEmptyRows() > 0) {
    int minRow = m_gmt_mgr->EmptyRows(0);
    int maxRow = minRow;
 
 
    for (int iConnect = 0; iConnect < m_gmt_mgr->NumberOfEmptyRows(); iConnect++){
      minRow = std::min(minRow, m_gmt_mgr->EmptyRows(iConnect));
      minRow = std::min(minRow, m_gmt_mgr->EmptyRowConnections(iConnect));
      maxRow = std::max(maxRow, m_gmt_mgr->EmptyRows(iConnect));
      maxRow = std::max(minRow, m_gmt_mgr->EmptyRowConnections(iConnect));
    }
  
    std::vector <int> connections(maxRow-minRow+1);
    
    // We fill them all with a one to one correspondence first.
    for (unsigned int iRow = 0; iRow < connections.size(); iRow++){
      connections[iRow] = iRow +  minRow;
    }
    
    // Now make the connections.
    for (int iConnect = 0; iConnect < m_gmt_mgr->NumberOfEmptyRows(); iConnect++){
      connections[m_gmt_mgr->EmptyRows(iConnect)-minRow] = m_gmt_mgr->EmptyRowConnections(iConnect);
    }
    
    //std::cout << "MinRow = " << minRow << std::endl;
    //std::cout << "MaxRow = " << maxRow << std::endl;
    //for (unsigned int iRow = 0; iRow < connections.size(); iRow++){
    //  std::cout << iRow << " " << connections[iRow] << std::endl;
    //}
 
    p_barrelDesign2->addMultipleRowConnection(minRow, connections);
 
  } else {
    // No empty rows.
    std::cout << "GeoPixelSiCrystal: Warning - No ganged pixels" << std::endl;
  }
  
 
  m_design = m_DDmgr->addDesign(std::move(p_barrelDesign2));
 
}

Member Function Documentation

Build()

GeoVPhysVol * GeoPixelSiCrystal::Build ( )

overridevirtual

Implements PixelGeoDC2::GeoVPixelFactory.

Definition at line 1279 of file PixelDetectorDC1DC2.cxx.

                                      {
  //
  // Dimensions
  //
  double length = m_gmt_mgr->PixelBoardLength();
  double thickness = m_gmt_mgr->PixelBoardThickness();
  double width = m_gmt_mgr->PixelBoardWidth();
  const GeoMaterial* siMat = m_mat_mgr->getMaterial("std::Silicon");
  const GeoBox* siBox = new GeoBox(thickness/2.,width/2.,length/2.);
  std::string logname;
  if(m_isBLayer) logname = "siBLayLog";
  else logname = "siLog";
  GeoLogVol* theSi = new GeoLogVol(logname,siBox,siMat);
  GeoFullPhysVol* siPhys = new GeoFullPhysVol(theSi);
  //
  // Add this to the list of detector elements:
  //
  int brl_ec=0;
  //
  // Build the Identifier for the silicon:
  //
  if(m_gmt_mgr->isBarrel() ) brl_ec = 0;
  if(m_gmt_mgr->isEndcap() ) brl_ec = 2*m_gmt_mgr->GetSide();
  const PixelID *ppp = m_gmt_mgr->getIdHelper();
  Identifier idwafer;
  if(brl_ec == 0) {
    idwafer = ppp->wafer_id(brl_ec,m_gmt_mgr->GetLD(),m_gmt_mgr->Phi(),m_gmt_mgr->Eta());
  } else {
    int phimod;
    //
    // This is evaluating the phimod. It's a bit complicated as I have to 
    // assign the numbers corresponding to a counter-clockwise rotation
    // in the disk reference frame. For the (eta) positive endcap I just 
    // have to match the start position with the start of the rotation. 
    //
    if(brl_ec == 2) {
      phimod = m_gmt_mgr->Phi()*2 + m_gmt_mgr->Eta();
    } else {
      //
      // The (eta) negative) endcap is more complicated, as there is an extra
      // rotation of the endcap as a whole around Y
      //
      phimod = 48-m_gmt_mgr->Phi()*2-m_gmt_mgr->Eta()-2;
      if (phimod == -1) phimod = 47;
    }
      
    idwafer = ppp->wafer_id(brl_ec,m_gmt_mgr->GetLD(),phimod,0);
  }
  m_id=idwafer;
  
  SiDetectorElement * element = new SiDetectorElement(idwafer, m_design, siPhys, m_gmt_mgr->commonItems());
  // Add conditions:  (do it here as eventually they will come from the cond DB)
  //SiliconConditions conditions(m_gmt_mgr->Temperature(m_isBLayer), m_gmt_mgr->Voltage(m_isBLayer), 0.);
  //element->setSiliconConditions(conditions);
  // Pass on G3ComptibleDigits option.
  // NO LONGER POSSIBLE. DC1 not supported anyway.
  // element->setG3CompatibleOrientation(m_gmt_mgr->G3CompatibleDigits());
  // add the element to the manager
  m_DDmgr->addDetectorElement(element);
  return siPhys;
}

getID()

Identifier GeoPixelSiCrystal::getID ( )

inline

Definition at line 326 of file PixelDetectorDC1DC2.h.

{return m_id;}

Member Data Documentation

m_DDmgr

InDetDD::PixelDetectorManager* PixelGeoDC2::GeoVPixelFactory::m_DDmgr {}

protectedinherited

Definition at line 53 of file PixelDetectorDC1DC2.h.

m_design

const InDetDD::SiDetectorDesign* PixelGeoDC2::GeoPixelSiCrystal::m_design {}

private

Definition at line 319 of file PixelDetectorDC1DC2.h.

m_epsilon

const double PixelGeoDC2::GeoVPixelFactory::m_epsilon {}

protectedinherited

Definition at line 54 of file PixelDetectorDC1DC2.h.

m_gmt_mgr

PixelGeometryManager* PixelGeoDC2::GeoVPixelFactory::m_gmt_mgr {}

protectedinherited

Definition at line 51 of file PixelDetectorDC1DC2.h.

m_id

Identifier PixelGeoDC2::GeoPixelSiCrystal::m_id

private

Definition at line 318 of file PixelDetectorDC1DC2.h.

m_isBLayer

bool PixelGeoDC2::GeoPixelSiCrystal::m_isBLayer {}

private

Definition at line 320 of file PixelDetectorDC1DC2.h.

m_mat_mgr

StoredMaterialManager* PixelGeoDC2::GeoVPixelFactory::m_mat_mgr {}

protectedinherited

Definition at line 52 of file PixelDetectorDC1DC2.h.

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The documentation for this class was generated from the following files:

• PixelDetectorDC1DC2.h
• PixelDetectorDC1DC2.cxx