SiliconProperties.h

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/*
  Copyright (C) 2002-2020 CERN for the benefit of the ATLAS collaboration
*/
 
#ifndef SIPROPERTIESTOOL_SILICONPROPERTIES_H
#define SIPROPERTIESTOOL_SILICONPROPERTIES_H
 
//   Header file for class SiliconProperties
// (c) ATLAS Detector software
// Class to hold silicon properties such as mobility, etc.
// Quantities are in CLHEP units.
// Authors: Grant Gorfine
 
#include "ReadoutGeometryBase/InDetDD_Defs.h"
 
namespace InDet {
 
class SiliconProperties
{
public:
 
  
  SiliconProperties();
  SiliconProperties(double temperature, double electricField);
 
  void setConditions(double temperature, double electricField);
  
  double electronDriftMobility() const;
  double holeDriftMobility() const;
  double electronHallMobility() const;
  double holeHallMobility() const;
  double electronDiffusionConstant() const;
  double holeDiffusionConstant() const;
  double electronSaturationVelocity() const;
  double holeSaturationVelocity() const;
  
  double electronHolePairsPerEnergy() const;
  
  double driftMobility(InDetDD::CarrierType carrier) const;
  double hallMobility(InDetDD::CarrierType carrier) const;
  double signedHallMobility(InDetDD::CarrierType carrier) const; // signed by the charge of the carrier.
  double diffusionConstant(InDetDD::CarrierType carrier) const;
  static double charge(InDetDD::CarrierType carrier) ;
 
 
  // These are mainly for use internally but are left public 
  static double calcElectronHallFactor(double temperature) ;
  static double calcHoleHallFactor(double temperature) ;
  static double calcDriftMobility(double electricField, double electricField_critical, 
               double saturationVelocity, double beta) ;
  double calcElectronDriftMobility(double temperature, double electricField) const;
  double calcHoleDriftMobility(double temperature, double electricField) const;
  double calcElectronHallMobility(double temperature, double mobility) const;
  double calcHoleHallMobility(double temperature, double mobility) const;
  static double calcDiffusionConstant(double temperature, double mobility) ;
 
  // Allow overriding calculated quantities.
  // Setting any one (other than setElectronHolePairsPerEnergy) will disable recalculations 
  // ie setConditions(temperature, electricField) will have no further effect.
  void setElectronDriftMobility(double mobility);
  void setHoleDriftMobility(double mobility);
  void setElectronHallMobility(double mobility);
  void setHoleHallMobility(double mobility);
  void setElectronDiffusionConstant(double diffusionConstant);
  void setHoleDiffusionConstant(double diffusionConstant);
  void setElectronSaturationVelocity(double electronSaturationVelocity);
  void setHoleSaturationVelocity(double holeSaturationVelocity);
  void setElectronHolePairsPerEnergy(double ehPairsPerEnergy);
 
private:
  double m_electronDriftMobility;
  double m_holeDriftMobility;
  double m_electronHallMobility;
  double m_holeHallMobility;
  double m_electronDiffusionConstant;
  double m_holeDiffusionConstant;
  double m_electronSaturationVelocity;
  double m_holeSaturationVelocity;
  double m_ehPairsPerEnergy;
 
  bool   m_override; // signal that quantities are overriden and recalculation are disabled.
 
  const static double s_ehPairsPerEnergyDefault;
};
 
} // namespace InDetDD
 
#endif // SIPROPERTIESTOOL_SILICONPROPERTIES_H